PMN25ENEAH Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: SMALL SIGNAL MOSFET FOR AUTOMOTI
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.1A, 10V
Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 597 pF @ 15 V
Qualification: AEC-Q100
Description: SMALL SIGNAL MOSFET FOR AUTOMOTI
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.1A, 10V
Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 597 pF @ 15 V
Qualification: AEC-Q100
на замовлення 2994 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10+ | 29.46 грн |
13+ | 22.14 грн |
100+ | 13.28 грн |
500+ | 11.54 грн |
1000+ | 7.85 грн |
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Технічний опис PMN25ENEAH Nexperia USA Inc.
Description: SMALL SIGNAL MOSFET FOR AUTOMOTI, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 6.1A, 10V, Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 597 pF @ 15 V, Qualification: AEC-Q100.
Інші пропозиції PMN25ENEAH
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
PMN25ENEAH | Виробник : Nexperia USA Inc. |
Description: SMALL SIGNAL MOSFET FOR AUTOMOTI Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.1A, 10V Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 597 pF @ 15 V Qualification: AEC-Q100 |
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