Технічний опис R1LV3216RSD-5SI#S0 Renesas
Description: IC SRAM 32MBIT PAR 52TSOP II, Packaging: Tape & Reel (TR), Package / Case: 52-TFSOP (0.350", 8.89mm Width), Mounting Type: Surface Mount, Memory Size: 32Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: SRAM, Memory Format: SRAM, Supplier Device Package: 52-TSOP II, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 4M x 8, 2M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції R1LV3216RSD-5SI#S0
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R1LV3216RSD-5SI#S0 | Виробник : Renesas Electronics America Inc |
 Description: IC SRAM 32MBIT PAR 52TSOP IIPackaging: Tape & Reel (TR) Package / Case: 52-TFSOP (0.350", 8.89mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM Memory Format: SRAM Supplier Device Package: 52-TSOP II Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 4M x 8, 2M x 16 DigiKey Programmable: Not Verified |
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R1LV3216RSD-5SI#S0 | Виробник : Renesas Electronics America Inc |
Description: IC SRAM 32MBIT PAR 52TSOP II Packaging: Cut Tape (CT) Package / Case: 52-TFSOP (0.350", 8.89mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM Memory Format: SRAM Supplier Device Package: 52-TSOP II Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 4M x 8, 2M x 16 DigiKey Programmable: Not Verified |
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| R1LV3216RSD-5SI#S0 | Виробник : Renesas Electronics |
SRAM 32M Adv LPSRAM Monochip uTSOP Pb-Free |
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