Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > RN2103(T5L,F,T)
RN2103(T5L,F,T)

RN2103(T5L,F,T) Toshiba Semiconductor and Storage

RN2101_datasheet_en_20220913.pdf?did=18841&prodName=RN2101 Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 1715 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
16+18.68 грн
19+ 15.08 грн
100+ 7.98 грн
500+ 4.93 грн
1000+ 3.35 грн
Мінімальне замовлення: 16
Відгуки про товар
Написати відгук

Технічний опис RN2103(T5L,F,T) Toshiba Semiconductor and Storage

Description: TRANS PREBIAS PNP 50V 0.1A SSM, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Supplier Device Package: SSM, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms.

Інші пропозиції RN2103(T5L,F,T)

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
RN2103(T5L,F,T) RN2103(T5L,F,T) Виробник : Toshiba Semiconductor and Storage RN2101_datasheet_en_20220913.pdf?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній