на замовлення 5933 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.54 грн |
| 10+ | 59.74 грн |
| 100+ | 40.45 грн |
| 500+ | 38.99 грн |
| 3000+ | 33.08 грн |
| 6000+ | 32.42 грн |
| 9000+ | 31.82 грн |
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Технічний опис RQ1A070ZPHZGTR ROHM Semiconductor
Description: AUTOMOTIVE PCH -12V -7A SMALL SI, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TSMT8, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V.
Інші пропозиції RQ1A070ZPHZGTR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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RQ1A070ZPHZGTR | Виробник : Rohm Semiconductor |
Description: AUTOMOTIVE PCH -12V -7A SMALL SI Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT8 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V |
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RQ1A070ZPHZGTR | Виробник : Rohm Semiconductor |
Description: AUTOMOTIVE PCH -12V -7A SMALL SI Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT8 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V |
товар відсутній |