RQ5L035GNTCL ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFET RQ5L035GN is the high reliability transistor, suitable for switching applications.
MOSFET RQ5L035GN is the high reliability transistor, suitable for switching applications.
на замовлення 3260 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
6+ | 54.09 грн |
10+ | 45.99 грн |
100+ | 27.7 грн |
500+ | 23.18 грн |
1000+ | 19.73 грн |
3000+ | 17.47 грн |
6000+ | 16.54 грн |
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Технічний опис RQ5L035GNTCL ROHM Semiconductor
Description: MOSFET N-CH 60V 3.5A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.7V @ 50µA, Supplier Device Package: TSMT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V.
Інші пропозиції RQ5L035GNTCL
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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RQ5L035GNTCL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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RQ5L035GNTCL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 60V 3.5A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 50µA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V |
товар відсутній |
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RQ5L035GNTCL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 60V 3.5A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 50µA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V |
товар відсутній |
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RQ5L035GNTCL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |