RQ6A050ZPTR ROHM
Виробник: ROHM
Description: ROHM - RQ6A050ZPTR - Leistungs-MOSFET, p-Kanal, 12 V, 5 A, 0.019 ohm, SOT-457T, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 12V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 1.25W
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 1.25W
Bauform - Transistor: SOT-457T
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.019ohm
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.019ohm
SVHC: No SVHC (17-Jan-2023)
Description: ROHM - RQ6A050ZPTR - Leistungs-MOSFET, p-Kanal, 12 V, 5 A, 0.019 ohm, SOT-457T, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 12V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 1.25W
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 1.25W
Bauform - Transistor: SOT-457T
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.019ohm
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.019ohm
SVHC: No SVHC (17-Jan-2023)
на замовлення 2685 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
13+ | 59.31 грн |
15+ | 52.46 грн |
100+ | 40.24 грн |
500+ | 29.55 грн |
1000+ | 21.84 грн |
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Технічний опис RQ6A050ZPTR ROHM
Description: ROHM - RQ6A050ZPTR - Leistungs-MOSFET, p-Kanal, 12 V, 5 A, 0.019 ohm, SOT-457T, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 12V, rohsCompliant: YES, Dauer-Drainstrom Id: 5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 1.25W, Gate-Source-Schwellenspannung, max.: 1V, euEccn: NLR, Verlustleistung: 1.25W, Bauform - Transistor: SOT-457T, Anzahl der Pins: 6Pin(s), Produktpalette: -, productTraceability: No, Wandlerpolarität: p-Kanal, Kanaltyp: p-Kanal, Betriebswiderstand, Rds(on): 0.019ohm, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.019ohm, SVHC: No SVHC (17-Jan-2023).
Інші пропозиції RQ6A050ZPTR за ціною від 20.13 грн до 65.56 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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RQ6A050ZPTR | Виробник : Rohm Semiconductor |
Description: MOSFET P-CH 12V 5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V |
на замовлення 2938 шт: термін постачання 21-31 дні (днів) |
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RQ6A050ZPTR | Виробник : ROHM Semiconductor | MOSFET RQ6A050ZP is the low on - resistance MOSFET, built-in G-S protection diode for switching application. |
на замовлення 1892 шт: термін постачання 21-30 дні (днів) |
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RQ6A050ZPTR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 1.25W; TSMT6 Polarisation: unipolar Drain-source voltage: -12V Drain current: -5A On-state resistance: 88mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -20A Mounting: SMD Case: TSMT6 кількість в упаковці: 1 шт |
товар відсутній |
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RQ6A050ZPTR | Виробник : Rohm Semiconductor |
Description: MOSFET P-CH 12V 5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V |
товар відсутній |
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RQ6A050ZPTR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 1.25W; TSMT6 Polarisation: unipolar Drain-source voltage: -12V Drain current: -5A On-state resistance: 88mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -20A Mounting: SMD Case: TSMT6 |
товар відсутній |