RQ6E035ATTCR Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V
Description: MOSFET P-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
12+ | 25.87 грн |
15+ | 19.17 грн |
100+ | 11.49 грн |
500+ | 9.98 грн |
1000+ | 6.79 грн |
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Технічний опис RQ6E035ATTCR Rohm Semiconductor
Description: MOSFET P-CH 30V 3.5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V.
Інші пропозиції RQ6E035ATTCR за ціною від 5.38 грн до 27.36 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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RQ6E035ATTCR | Виробник : ROHM Semiconductor | MOSFET Pch -30V -3.5A Power MOSFET |
на замовлення 3262 шт: термін постачання 21-30 дні (днів) |
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RQ6E035ATTCR | Виробник : ROHM - Japan |
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 3,5A; 1,25W; -55°C~150°C; RQ6E035ATTCR TRQ6e035attcr кількість в упаковці: 10 шт |
на замовлення 50 шт: термін постачання 28-31 дні (днів) |
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RQ6E035ATTCR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1.25W; TSMT6 Case: TSMT6 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.25W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -30V Drain current: -3.5A On-state resistance: 70mΩ Type of transistor: P-MOSFET кількість в упаковці: 5 шт |
товар відсутній |
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RQ6E035ATTCR | Виробник : Rohm Semiconductor |
Description: MOSFET P-CH 30V 3.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V |
товар відсутній |
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RQ6E035ATTCR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1.25W; TSMT6 Case: TSMT6 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.25W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -30V Drain current: -3.5A On-state resistance: 70mΩ Type of transistor: P-MOSFET |
товар відсутній |