RQ6E045BNTCR Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N-CH 30V 4.5A TSMT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
на замовлення 3019 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.02 грн |
| 14+ | 20.83 грн |
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Технічний опис RQ6E045BNTCR Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj), Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V.
Інші пропозиції RQ6E045BNTCR за ціною від 6.84 грн до 35.34 грн
| Фото | Назва | Виробник | Інформація |
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RQ6E045BNTCR | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 30V 4.5A TSMT Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V |
на замовлення 3019 шт: термін постачання 21-31 дні (днів) |
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RQ6E045BNTCR | Виробник : ROHM Semiconductor |
MOSFET Nch 30V 4.5A Power MOSFET |
на замовлення 1968 шт: термін постачання 21-30 дні (днів) |
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| RQ6E045BNTCR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6 Mounting: SMD Power dissipation: 1.25W Case: TSMT6 Kind of package: reel; tape Pulsed drain current: 18A Gate charge: 8.4nC Polarisation: unipolar Drain current: 4.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 49mΩ Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товар відсутній |
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RQ6E045BNTCR | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 30V 4.5A TSMT Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V |
товар відсутній |
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| RQ6E045BNTCR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6 Mounting: SMD Power dissipation: 1.25W Case: TSMT6 Kind of package: reel; tape Pulsed drain current: 18A Gate charge: 8.4nC Polarisation: unipolar Drain current: 4.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 49mΩ Gate-source voltage: ±20V |
товар відсутній |