RSJ650N10TL Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N-CH 100V 65A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 408.85 грн |
| 10+ | 337.73 грн |
| 100+ | 281.43 грн |
| 500+ | 233.04 грн |
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Технічний опис RSJ650N10TL Rohm Semiconductor
Description: MOSFET N-CH 100V 65A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Ta), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: LPTS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V.
Інші пропозиції RSJ650N10TL за ціною від 203.26 грн до 437.86 грн
| Фото | Назва | Виробник | Інформація |
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RSJ650N10TL | Виробник : ROHM Semiconductor |
MOSFET 4V Drive Nch MOSFET |
на замовлення 254 шт: термін постачання 21-30 дні (днів) |
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| RSJ650N10TL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK Drain-source voltage: 100V Drain current: 65A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 260nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 130A Power dissipation: 100W Mounting: SMD Case: D2PAK кількість в упаковці: 1000 шт |
товар відсутній |
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RSJ650N10TL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 100V 65A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V |
товар відсутній |
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| RSJ650N10TL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK Drain-source voltage: 100V Drain current: 65A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 260nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 130A Power dissipation: 100W Mounting: SMD Case: D2PAK |
товар відсутній |