RSR015P06FRATL ROHM SEMICONDUCTOR


Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
кількість в упаковці: 1 шт
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Технічний опис RSR015P06FRATL ROHM SEMICONDUCTOR

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3, Mounting: SMD, Case: TSMT3, Kind of package: reel; tape, Drain current: -1.5A, On-state resistance: 0.36Ω, Type of transistor: P-MOSFET, Power dissipation: 1W, Polarisation: unipolar, Gate charge: 10nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: -6A, Drain-source voltage: -60V, кількість в упаковці: 1 шт.

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RSR015P06FRATL Виробник : ROHM SEMICONDUCTOR Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
товар відсутній