S2M0025120K SMC Diode Solutions
Виробник: SMC Diode SolutionsDescription: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4402 pF @ 1000 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2804.49 грн |
| 10+ | 2406.34 грн |
| 100+ | 2112.14 грн |
Відгуки про товар
Написати відгук
Технічний опис S2M0025120K SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 4V @ 15mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 4402 pF @ 1000 V.
Інші пропозиції S2M0025120K
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| S2M0025120K | Виробник : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 250A; 517W Mounting: THT Features of semiconductor devices: Kelvin terminal Case: TO247-4 Power dissipation: 517W Technology: SiC Kind of package: tube Gate charge: 130nC Kind of channel: enhanced Gate-source voltage: -10...25V Pulsed drain current: 250A Drain-source voltage: 1.2kV Drain current: 39A On-state resistance: 41mΩ Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
||
| S2M0025120K | Виробник : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 250A; 517W Mounting: THT Features of semiconductor devices: Kelvin terminal Case: TO247-4 Power dissipation: 517W Technology: SiC Kind of package: tube Gate charge: 130nC Kind of channel: enhanced Gate-source voltage: -10...25V Pulsed drain current: 250A Drain-source voltage: 1.2kV Drain current: 39A On-state resistance: 41mΩ Type of transistor: N-MOSFET Polarisation: unipolar |
товар відсутній |