SCT10N120AG STMicroelectronics
Виробник: STMicroelectronicsMOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ TJ = 1
на замовлення 578 шт:
термін постачання 385-394 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 813.72 грн |
| 10+ | 706.6 грн |
| 100+ | 532.07 грн |
| 600+ | 481.59 грн |
Відгуки про товар
Написати відгук
Технічний опис SCT10N120AG STMicroelectronics
Description: SICFET N-CH 1200V 12A HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: HiP247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SCT10N120AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SCT10N120AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 12A Automotive 3-Pin HIP-247 Tube |
товар відсутній |
|
| SCT10N120AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 12A Automotive 3-Pin HIP-247 Tube |
товар відсутній |
||
 |
SCT10N120AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 12A Automotive AEC-Q101 3-Pin HIP-247 Tube |
товар відсутній |
|
 |
SCT10N120AG | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 24A; 150W Application: automotive industry Mounting: THT Polarisation: unipolar Kind of package: tube Gate charge: 22nC Technology: SiC Pulsed drain current: 24A Case: HIP247™ Drain-source voltage: 1.2kV Drain current: 10A On-state resistance: 0.58Ω Type of transistor: N-MOSFET Power dissipation: 150W кількість в упаковці: 1 шт |
товар відсутній |
|
 |
SCT10N120AG | Виробник : STMicroelectronics |
Description: SICFET N-CH 1200V 12A HIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: HiP247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
|
|
|
SCT10N120AG | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 24A; 150W Application: automotive industry Mounting: THT Polarisation: unipolar Kind of package: tube Gate charge: 22nC Technology: SiC Pulsed drain current: 24A Case: HIP247™ Drain-source voltage: 1.2kV Drain current: 10A On-state resistance: 0.58Ω Type of transistor: N-MOSFET Power dissipation: 150W |
товар відсутній |