SCT3030ARC14 ROHM
Виробник: ROHM
Description: ROHM - SCT3030ARC14 - Siliziumkarbid-MOSFET, SiC, Eins, n-Kanal, 70 A, 650 V, 0.03 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 70A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.6V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 262W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.03ohm
Description: ROHM - SCT3030ARC14 - Siliziumkarbid-MOSFET, SiC, Eins, n-Kanal, 70 A, 650 V, 0.03 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 70A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.6V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 262W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.03ohm
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2043.98 грн |
5+ | 2002.99 грн |
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Технічний опис SCT3030ARC14 ROHM
Description: SICFET N-CH 650V 70A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Power Dissipation (Max): 262W, Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500.
Інші пропозиції SCT3030ARC14 за ціною від 2184.08 грн до 3458.68 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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SCT3030ARC14 | Виробник : Rohm Semiconductor |
Description: SICFET N-CH 650V 70A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 262W Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 |
на замовлення 171 шт: термін постачання 21-31 дні (днів) |
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SCT3030ARC14 | Виробник : ROHM Semiconductor | MOSFET 650V 70A 30MO NCH SIC MOSFET |
на замовлення 238 шт: термін постачання 21-30 дні (днів) |
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SCT3030ARC14 | Виробник : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Mounting: THT Power dissipation: 262W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Case: TO247-4 Drain-source voltage: 650V Drain current: 70A On-state resistance: 39mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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SCT3030ARC14 | Виробник : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Mounting: THT Power dissipation: 262W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Case: TO247-4 Drain-source voltage: 650V Drain current: 70A On-state resistance: 39mΩ Type of transistor: N-MOSFET |
товар відсутній |