SDS065J012S3-ISARH Luminus Devices Inc.
Виробник: Luminus Devices Inc.
Description: DIODE 650V-12A DFN8*8-4L
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 651pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
Description: DIODE 650V-12A DFN8*8-4L
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 651pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
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Технічний опис SDS065J012S3-ISARH Luminus Devices Inc.
Description: DIODE 650V-12A DFN8*8-4L, Packaging: Tape & Reel (TR), Package / Case: 4-PowerVSFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 651pF @ 0V, 1MHz, Current - Average Rectified (Io): 44A, Supplier Device Package: 4-DFN (8x8), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A, Current - Reverse Leakage @ Vr: 36 µA @ 650 V.
Інші пропозиції SDS065J012S3-ISARH
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SDS065J012S3-ISARH | Виробник : Luminus Devices Inc. |
Description: DIODE 650V-12A DFN8*8-4L Packaging: Cut Tape (CT) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 651pF @ 0V, 1MHz Current - Average Rectified (Io): 44A Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Current - Reverse Leakage @ Vr: 36 µA @ 650 V |
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