SEMIX453GAL12E4S 27890144 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Case: SEMiX® 3s
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; thermistor
Collector current: 450A
Pulsed collector current: 1.35kA
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Case: SEMiX® 3s
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; thermistor
Collector current: 450A
Pulsed collector current: 1.35kA
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
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Технічний опис SEMIX453GAL12E4S 27890144 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw, Application: for UPS; frequency changer; Inverter; photovoltaics, Case: SEMiX® 3s, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: boost chopper; thermistor, Collector current: 450A, Pulsed collector current: 1.35kA, Gate-emitter voltage: ±20V, Semiconductor structure: diode/transistor, Max. off-state voltage: 1.2kV, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX453GAL12E4S 27890144
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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SEMIX453GAL12E4S 27890144 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw Application: for UPS; frequency changer; Inverter; photovoltaics Case: SEMiX® 3s Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; thermistor Collector current: 450A Pulsed collector current: 1.35kA Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV |
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