SG40T120DB SIRECTIFIER
Виробник: SIRECTIFIERCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247AD
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Turn-on time: 143ns
Turn-off time: 560ns
Type of transistor: IGBT
Power dissipation: 300W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 170nC
Mounting: THT
Case: TO247AD
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис SG40T120DB SIRECTIFIER
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247AD, Kind of package: tube, Collector-emitter voltage: 1.2kV, Gate-emitter voltage: ±20V, Collector current: 40A, Pulsed collector current: 180A, Turn-on time: 143ns, Turn-off time: 560ns, Type of transistor: IGBT, Power dissipation: 300W, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 170nC, Mounting: THT, Case: TO247AD, кількість в упаковці: 1 шт.
Інші пропозиції SG40T120DB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
SG40T120DB | Виробник : SIRECTIFIER |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247AD Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 180A Turn-on time: 143ns Turn-off time: 560ns Type of transistor: IGBT Power dissipation: 300W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 170nC Mounting: THT Case: TO247AD |
товар відсутній |