SGB15N60ATMA1

SGB15N60ATMA1 Infineon Technologies


sgb15n60_rev2_3g.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 31A 139000mW 3-Pin(2+Tab) D2PAK T/R
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Технічний опис SGB15N60ATMA1 Infineon Technologies

Description: IGBT 600V 31A 139W TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Td (on/off) @ 25°C: 32ns/234ns, Switching Energy: 570µJ, Test Condition: 400V, 15A, 21Ohm, 15V, Gate Charge: 76 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 31 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 62 A, Power - Max: 139 W.

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SGB15N60ATMA1 SGB15N60ATMA1 Виробник : Infineon Technologies SGB15N60.pdf Description: IGBT 600V 31A 139W TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
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