SGB20N60ATMA1

SGB20N60ATMA1 Infineon Technologies


sgb20n60_rev2_2.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 40A 179000mW 3-Pin(2+Tab) D2PAK
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Технічний опис SGB20N60ATMA1 Infineon Technologies

Description: IGBT 600V 40A 179W TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Td (on/off) @ 25°C: 36ns/225ns, Switching Energy: 440µJ (on), 330µJ (off), Test Condition: 400V, 20A, 16Ohm, 15V, Gate Charge: 100 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 179 W.

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SGB20N60ATMA1 SGB20N60ATMA1 Виробник : Infineon Technologies SGB20N60.pdf Description: IGBT 600V 40A 179W TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
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