SGI02N120XKSA1

SGI02N120XKSA1 Infineon Technologies


sgp_d_i02n120_rev2_3g.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3-Pin(3+Tab) TO-262 Tube
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Технічний опис SGI02N120XKSA1 Infineon Technologies

Description: IGBT 1200V 6.2A 62W TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A, Supplier Device Package: PG-TO262-3-1, IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/260ns, Switching Energy: 220µJ, Test Condition: 800V, 2A, 91Ohm, 15V, Gate Charge: 11 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 6.2 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9.6 A, Power - Max: 62 W.

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SGI02N120XKSA1 SGI02N120XKSA1 Виробник : Infineon Technologies SGx02N120.pdf Description: IGBT 1200V 6.2A 62W TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
Supplier Device Package: PG-TO262-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/260ns
Switching Energy: 220µJ
Test Condition: 800V, 2A, 91Ohm, 15V
Gate Charge: 11 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.6 A
Power - Max: 62 W
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SGI02N120XKSA1 Виробник : Infineon Technologies SGx02N120.pdf IGBT Transistors IGBT PRODUCTS
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