SH8K52GZETB Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET 2N-CH 100V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.96 грн |
| 5000+ | 30.23 грн |
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Технічний опис SH8K52GZETB Rohm Semiconductor
Description: MOSFET 2N-CH 100V 3A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Not For New Designs.
Інші пропозиції SH8K52GZETB за ціною від 29.49 грн до 86.8 грн
| Фото | Назва | Виробник | Інформація |
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SH8K52GZETB | Виробник : Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 3A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
на замовлення 9895 шт: термін постачання 21-31 дні (днів) |
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SH8K52GZETB | Виробник : ROHM Semiconductor |
MOSFET 100V Nch+Nch Power MOSFET. SH8K52 is a Power MOSFET with Low on-resistance, suitable for switching. |
на замовлення 1994 шт: термін постачання 21-30 дні (днів) |
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SH8K52GZETB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; Idm: 12A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Pulsed drain current: 12A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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SH8K52GZETB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; Idm: 12A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Pulsed drain current: 12A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |