SI2301AHE3-TP

SI2301AHE3-TP Micro Commercial Co


SI2301AHE3(SOT-23).pdf Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 438 pF @ 10 V
Qualification: AEC-Q101
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Технічний опис SI2301AHE3-TP Micro Commercial Co

Description: Interface, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 51mOhm @ 3.4A, 4.5V, Power Dissipation (Max): 1W, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 438 pF @ 10 V, Qualification: AEC-Q101.

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SI2301AHE3-TP SI2301AHE3-TP Виробник : Micro Commercial Components (MCC) SI2301AHE3_SOT_23_-3135241.pdf MOSFET
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