SIA950DJ-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 190V 0.95A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 190V
Current - Continuous Drain (Id) @ 25°C: 950mA
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 360mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Obsolete
Description: MOSFET 2N-CH 190V 0.95A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 190V
Current - Continuous Drain (Id) @ 25°C: 950mA
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 360mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Obsolete
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Технічний опис SIA950DJ-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 190V 0.95A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7W, Drain to Source Voltage (Vdss): 190V, Current - Continuous Drain (Id) @ 25°C: 950mA, Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V, Rds On (Max) @ Id, Vgs: 3.8Ohm @ 360mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Obsolete.
Інші пропозиції SIA950DJ-T1-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SIA950DJ-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 190V 0.95A SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7W Drain to Source Voltage (Vdss): 190V Current - Continuous Drain (Id) @ 25°C: 950mA Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V Rds On (Max) @ Id, Vgs: 3.8Ohm @ 360mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Obsolete |
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