SIDR626DP-T1-RE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 89.5 грн |
| 6000+ | 82.69 грн |
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Технічний опис SIDR626DP-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V.
Інші пропозиції SIDR626DP-T1-RE3 за ціною від 85.9 грн до 183.95 грн
| Фото | Назва | Виробник | Інформація |
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SIDR626DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 60-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V |
на замовлення 8722 шт: термін постачання 21-31 дні (днів) |
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| SIDR626DP-T1-RE3 | Виробник : Vishay |
N-Channel 60 V (D-S) MOSFET |
товар відсутній |
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| SIDR626DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 100A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 200A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SIDR626DP-T1-RE3 | Виробник : Vishay / Siliconix |
MOSFET N-CHANNEL 60-V (D-S) MOSFET |
товар відсутній |
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| SIDR626DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 100A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 200A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |