SIL3400AHE3-TP

SIL3400AHE3-TP Micro Commercial Co


SIL3400AHE3(SOT23-6L).pdf Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.8W (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-6L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
Qualification: AEC-Q101
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Технічний опис SIL3400AHE3-TP Micro Commercial Co

Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 5.6A, 10V, Power Dissipation (Max): 1.8W (Tj), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-6L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V, Qualification: AEC-Q101.

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SIL3400AHE3-TP Виробник : Micro Commercial Components (MCC) SIL3400AHE3_SOT23_6L_-3326875.pdf MOSFET
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