SiUD403ED-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
Description: MOSFET P-CH 20V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.47 грн |
6000+ | 5.15 грн |
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Технічний опис SiUD403ED-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 500MA PPAK 0806, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 0806, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerPAK® 0806, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V.
Інші пропозиції SiUD403ED-T1-GE3 за ціною від 3.99 грн до 25.15 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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SiUD403ED-T1-GE3 | Виробник : Vishay / Siliconix | MOSFET -20V Vds 8V Vgs PowerPAK 0806 |
на замовлення 26840 шт: термін постачання 21-30 дні (днів) |
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SiUD403ED-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 20V 500MA PPAK 0806 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V |
на замовлення 11533 шт: термін постачання 21-31 дні (днів) |
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SIUD403ED-T1-GE3 | Виробник : Vishay | Trans MOSFET P-CH 20V 0.5A 3-Pin PowerPAK T/R |
товар відсутній |
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SiUD403ED-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -500mA; 1.25W Mounting: SMD Polarisation: unipolar On-state resistance: 4.4Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 1.7nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.8A Drain-source voltage: -20V Drain current: -0.5A кількість в упаковці: 5 шт |
товар відсутній |
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SiUD403ED-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -500mA; 1.25W Mounting: SMD Polarisation: unipolar On-state resistance: 4.4Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 1.7nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.8A Drain-source voltage: -20V Drain current: -0.5A |
товар відсутній |