SIZ200DT-T1-GE3 Vishay Semiconductors
на замовлення 4999 шт:
термін постачання 21-30 дні (днів)
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Технічний опис SIZ200DT-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 22A 8POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.3W (Ta), 33W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-PowerPair® (3.3x3.3).
Інші пропозиції SIZ200DT-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SIZ200DT-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 30V 22A 8-Pin PowerPAIR EP T/R |
товар відсутній |
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| SIZ200DT-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 61A; Idm: 130A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 130A Power dissipation: 33W On-state resistance: 7.7/7.3mΩ Mounting: SMD Gate charge: 30/28nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SIZ200DT-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 22A 8POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) |
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SIZ200DT-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 22A 8POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) |
товар відсутній |
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| SIZ200DT-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 61A; Idm: 130A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 130A Power dissipation: 33W On-state resistance: 7.7/7.3mΩ Mounting: SMD Gate charge: 30/28nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |