SIZ250DT-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET 2N-CH 60V 14A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active
на замовлення 287 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.32 грн |
| 10+ | 61.51 грн |
| 100+ | 47.82 грн |
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Технічний опис SIZ250DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 60V 14A 8PWRPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.3W (Ta), 33W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V, Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-PowerPair® (3.3x3.3), Part Status: Active.
Інші пропозиції SIZ250DT-T1-GE3 за ціною від 29.36 грн до 83.7 грн
| Фото | Назва | Виробник | Інформація |
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SIZ250DT-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFET DUAL N-CHANNEL 60-V PowerPAIR 3 x 3S |
на замовлення 34726 шт: термін постачання 21-30 дні (днів) |
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| SIZ250DT-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 38A; Idm: 80A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 80A Power dissipation: 33W Gate-source voltage: ±20V On-state resistance: 18.87/18.11mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SIZ250DT-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 14A 8PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) Part Status: Active |
товар відсутній |
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| SIZ250DT-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 38A; Idm: 80A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 80A Power dissipation: 33W Gate-source voltage: ±20V On-state resistance: 18.87/18.11mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |