SK 10 GD 126 ET 24910260 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 8A; SEMITOP3
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Collector current: 8A
Pulsed collector current: 16A
Type of module: IGBT
Topology: IGBT three-phase bridge OE output; thermistor
Case: SEMITOP3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 8A; SEMITOP3
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Collector current: 8A
Pulsed collector current: 16A
Type of module: IGBT
Topology: IGBT three-phase bridge OE output; thermistor
Case: SEMITOP3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
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Технічний опис SK 10 GD 126 ET 24910260 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 8A; SEMITOP3, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Application: for UPS; frequency changer; Inverter; photovoltaics, Collector current: 8A, Pulsed collector current: 16A, Type of module: IGBT, Topology: IGBT three-phase bridge OE output; thermistor, Case: SEMITOP3, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, кількість в упаковці: 1 шт.
Інші пропозиції SK 10 GD 126 ET 24910260
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SK 10 GD 126 ET 24910260 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 8A; SEMITOP3 Electrical mounting: Press-in PCB Mechanical mounting: screw Application: for UPS; frequency changer; Inverter; photovoltaics Collector current: 8A Pulsed collector current: 16A Type of module: IGBT Topology: IGBT three-phase bridge OE output; thermistor Case: SEMITOP3 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V |
товар відсутній |