Технічний опис SPB100N08S2L-07 INFINEON
Description: MOSFET N-CH 75V 100A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 68A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TO263-3-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7130 pF @ 25 V.
Інші пропозиції SPB100N08S2L-07
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SPB100N08S2L-07 | Виробник : INFINEON |
 TO-263/D2-PAK |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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SPB100N08S2L-07 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 75V 100A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 68A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7130 pF @ 25 V |
товар відсутній |
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SPB100N08S2L-07 | Виробник : Infineon Technologies |
MOSFET MOSFET |
товар відсутній |