SQJ202EP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 2805 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 91.97 грн |
10+ | 72.58 грн |
100+ | 56.49 грн |
500+ | 44.93 грн |
1000+ | 36.6 грн |
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Технічний опис SQJ202EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W, 48W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 20A, 60A, Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції SQJ202EP-T1_GE3 за ціною від 34.08 грн до 100.75 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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SQJ202EP-T1_GE3 | Виробник : Vishay / Siliconix | MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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SQJ202EP-T1_GE3 | Виробник : Vishay | Trans MOSFET N-CH 12V 20A/60A Automotive 5-Pin(4+Tab) PowerPAK SO T/R |
товар відсутній |
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SQJ202EP-T1_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 12V 20A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W, 48W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A, 60A Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товар відсутній |