Технічний опис STB12N60DM2AG STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V, Power Dissipation (Max): 125W, Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції STB12N60DM2AG
| Фото | Назва | Виробник | Інформація |
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| STB12N60DM2AG | Виробник : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Power Dissipation (Max): 125W Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
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STB12N60DM2AG | Виробник : STMicroelectronics |
 MOSFET Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a D2PAK package |
товар відсутній |