Технічний опис STGB20H65DFB2 STMicroelectronics
Description: TRENCH GATE FIELD-STOP 650 V, 20, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 215 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: D2PAK-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 16ns/78.8ns, Switching Energy: 265µJ (on), 214µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 56 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 147 W.
Інші пропозиції STGB20H65DFB2
| Фото | Назва | Виробник | Інформація |
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STGB20H65DFB2 | Виробник : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 40A 147W 3-Pin(2+Tab) D2PAK T/R |
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| STGB20H65DFB2 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 40A 147000mW 3-Pin(2+Tab) D2PAK T/R |
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| STGB20H65DFB2 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 56nC Kind of package: reel; tape кількість в упаковці: 1 шт |
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STGB20H65DFB2 | Виробник : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP 650 V, 20 Packaging: Tape & Reel (TR) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 215 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: D2PAK-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16ns/78.8ns Switching Energy: 265µJ (on), 214µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 147 W |
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STGB20H65DFB2 | Виробник : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP 650 V, 20 Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 215 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: D2PAK-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16ns/78.8ns Switching Energy: 265µJ (on), 214µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 147 W |
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| STGB20H65DFB2 | Виробник : STMicroelectronics |
IGBT Transistors Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT |
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| STGB20H65DFB2 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 56nC Kind of package: reel; tape |
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