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STH200N10WF7-2

STH200N10WF7-2 STMicroelectronics

sth200n10wf7_2-2604559.pdf Виробник: STMicroelectronics
MOSFET N-channel 100 V, 4mOhm typ., 180 A STripFET F7 Power MOSFET
на замовлення 853 шт:
термін постачання 523-532 дні (днів)
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1+468.86 грн
10+ 392.64 грн
100+ 280.98 грн
500+ 249.1 грн
1000+ 221.2 грн
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Технічний опис STH200N10WF7-2 STMicroelectronics

Description: N-CHANNEL 100 V, 4.8 MOHM TYP.,, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V, Power Dissipation (Max): 340W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V.

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STH200N10WF7-2 Виробник : STMicroelectronics sth200n10wf7-2.pdf STH200N10WF7-2
товар відсутній
STH200N10WF7-2 Виробник : STMicroelectronics sth200n10wf7-2.pdf STH200N10WF7-2
товар відсутній
STH200N10WF7-2 STH200N10WF7-2 Виробник : STMicroelectronics sth200n10wf7-2.pdf Description: N-CHANNEL 100 V, 4.8 MOHM TYP.,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
товар відсутній
STH200N10WF7-2 STH200N10WF7-2 Виробник : STMicroelectronics sth200n10wf7-2.pdf Description: N-CHANNEL 100 V, 4.8 MOHM TYP.,
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
товар відсутній