SUD35N10-26P-BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 12A/35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
Description: MOSFET N-CH 100V 12A/35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
на замовлення 1835 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.24 грн |
| 10+ | 109.88 грн |
| 100+ | 87.44 грн |
| 500+ | 69.43 грн |
| 1000+ | 58.91 грн |
Відгуки про товар
Написати відгук
Технічний опис SUD35N10-26P-BE3 Vishay Siliconix
Description: MOSFET N-CH 100V 12A/35A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V, Power Dissipation (Max): 8.3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V.
Інші пропозиції SUD35N10-26P-BE3 за ціною від 60.51 грн до 150.34 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SUD35N10-26P-BE3 | Виробник : Vishay / Siliconix | MOSFET 100V N-CH (D-S) |
на замовлення 25970 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| SUD35N10-26P-BE3 | Виробник : Vishay |
 Trans MOSFET N-CH 100V 35A 4-Pin(3+Tab) TO-252 |
товар відсутній |
||||||||||||||||||
| SUD35N10-26P-BE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 35A; Idm: 40A; 83W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 40A Power dissipation: 83W Case: TO252 Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
товар відсутній |
||||||||||||||||||
|
|
SUD35N10-26P-BE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 12A/35A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V Power Dissipation (Max): 8.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V |
товар відсутній |
|||||||||||||||||
| SUD35N10-26P-BE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 35A; Idm: 40A; 83W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 40A Power dissipation: 83W Case: TO252 Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |