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SUP50N03-5M1P-GE3

SUP50N03-5M1P-GE3 Vishay


sup50n03.pdf Виробник: Vishay
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220AB
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Технічний опис SUP50N03-5M1P-GE3 Vishay

Description: MOSFET N-CH 30V 50A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 22A, 10V, Power Dissipation (Max): 2.7W (Ta), 59.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 15 V.

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SUP50N03-5M1P-GE3 SUP50N03-5M1P-GE3 Виробник : Vishay Siliconix sup50n03.pdf Description: MOSFET N-CH 30V 50A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 22A, 10V
Power Dissipation (Max): 2.7W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 15 V
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SUP50N03-5M1P-GE3 SUP50N03-5M1P-GE3 Виробник : Vishay / Siliconix sup50n03-1764832.pdf MOSFET RECOMMENDED ALT 78-SUP85N03-3M6P-GE3
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