TDB6HK180N16RRBOSA1

TDB6HK180N16RRBOSA1 Infineon Technologies


5296ds_tdb6hk180n16rr_2_0_zh-en.pdffolderiddb3a304340f610c201410c3e32.pdf Виробник: Infineon Technologies
Trans IGBT Module N-CH 1200V 140A 515000mW Tray
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Технічний опис TDB6HK180N16RRBOSA1 Infineon Technologies

Description: SCR MODULE VDRM 1600V 70A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter with Brake, Operating Temperature: 175°C (TJ), Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode, Current - Hold (Ih) (Max): 220 mA, Current - Gate Trigger (Igt) (Max): 100 mA, Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A, Number of SCRs, Diodes: 3 SCRs, 3 Diodes, Voltage - Gate Trigger (Vgt) (Max): 2 V, NTC Thermistor: No, Supplier Device Package: AG-ECONO2B, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 140 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 515 W, Voltage - Off State: 1.6 kV, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V.

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TDB6HK180N16RRBOSA1 TDB6HK180N16RRBOSA1 Виробник : Infineon Technologies 5296ds_tdb6hk180n16rr_2_0_zh-en.pdffolderiddb3a304340f610c201410c3e32.pdf Trans IGBT Module N-CH 1200V 140A 515W Tray
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TDB6HK180N16RRBOSA1 TDB6HK180N16RRBOSA1 Виробник : Infineon Technologies 5296ds_tdb6hk180n16rr_2_0_zh-en.pdffolderiddb3a304340f610c201410c3e32.pdf Trans IGBT Module N-CH 1200V 140A 515W Tray
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TDB6HK180N16RRBOSA1 TDB6HK180N16RRBOSA1 Виробник : Infineon Technologies Infineon-TDB6HK180N16RR-DS-v02_00-en_de.pdf?fileId=db3a304340f610c201410c3c35823305 Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter with Brake
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Voltage - Off State: 1.6 kV
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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TDB6HK180N16RRBOSA1 TDB6HK180N16RRBOSA1 Виробник : Infineon Technologies Infineon_TDB6HK180N16RR_DS_v02_00_en_de-1854163.pdf IGBT Modules LOW POWER ECONO
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