Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > TK110E10PL,S1X

TK110E10PL,S1X Toshiba Semiconductor and Storage

Name: TK110E10PL,S1X
Brand: Toshiba Semiconductor and Storage
SKU: 10447115-3
Price: 51.73 UAH
Availability: InStock

TK110E10PL_datasheet_en_20210126.pdf?did=60605&prodName=TK110E10PL

Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V

на замовлення 208 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
4+	84.07 грн
50+	65.28 грн
100+	51.73 грн

Мінімальне замовлення: 4

Відгуки про товар

Написати відгук

Технічний опис TK110E10PL,S1X Toshiba Semiconductor and Storage

Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V, Power Dissipation (Max): 87W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V.