Технічний опис TK6Q60W,S1VQ(S Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; IPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 6.2A, Pulsed drain current: 24.8A, Power dissipation: 60W, Case: IPAK, Gate-source voltage: ±30V, On-state resistance: 0.68Ω, Mounting: THT, Gate charge: 12nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції TK6Q60W,S1VQ(S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| TK6Q60W,S1VQ(S | Виробник : TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 24.8A Power dissipation: 60W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| TK6Q60W,S1VQ(S | Виробник : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 24.8A Power dissipation: 60W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |