TP65H035G4QS Transphorm
Виробник: TransphormDescription: 650 V 46.5 A GAN FET HIGH VOLTAG
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
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Технічний опис TP65H035G4QS Transphorm
Description: 650 V 46.5 A GAN FET HIGH VOLTAG, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 1mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
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TP65H035G4QS | Виробник : Transphorm |
Description: 650 V 46.5 A GAN FET HIGH VOLTAG Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
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