Технічний опис TPH2R306NH,L1Q(M Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 130A, Power dissipation: 78W, Case: SOP8A, Gate-source voltage: ±20V, On-state resistance: 4.7mΩ, Mounting: SMD, Gate charge: 72nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 5000 шт.
Інші пропозиції TPH2R306NH,L1Q(M
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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TPH2R306NH,L1Q(M | Виробник : TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 130A Power dissipation: 78W Case: SOP8A Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
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TPH2R306NH,L1Q(M | Виробник : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 130A Power dissipation: 78W Case: SOP8A Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |