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TPH2R903PL,L1Q Toshiba Semiconductor and Storage

TPH2R903PL_datasheet_en_20191030.pdf?did=55619&prodName=TPH2R903PL Виробник: Toshiba Semiconductor and Storage
Description: PB-FPOWERMOSFETTRANSISTORSOP8-AD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
на замовлення 4970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+59.64 грн
10+ 46.91 грн
100+ 36.49 грн
500+ 29.02 грн
1000+ 23.64 грн
2000+ 22.26 грн
Мінімальне замовлення: 5
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Технічний опис TPH2R903PL,L1Q Toshiba Semiconductor and Storage

Description: PB-FPOWERMOSFETTRANSISTORSOP8-AD, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V, Power Dissipation (Max): 960mW (Ta), 81W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V.

Інші пропозиції TPH2R903PL,L1Q

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Ціна без ПДВ
TPH2R903PL,L1Q Виробник : Toshiba Semiconductor and Storage TPH2R903PL_datasheet_en_20191030.pdf?did=55619&prodName=TPH2R903PL Description: PB-FPOWERMOSFETTRANSISTORSOP8-AD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
товар відсутній
TPH2R903PL,L1Q TPH2R903PL,L1Q Виробник : Toshiba TPH2R903PL_datasheet_en_20191030-1916449.pdf MOSFET POWER MOSFET TRANSISTOR
товар відсутній