TPHR7404PU,L1Q(M TOSHIBA
Виробник: TOSHIBADescription: TOSHIBA - TPHR7404PU,L1Q(M - Leistungs-MOSFET, n-Kanal, 40 V, 400 A, 510 µohm, SOP Advance, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 400A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 210W
Bauform - Transistor: SOP Advance
Anzahl der Pins: 8Pin(s)
Produktpalette: U-MOSIX-H Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 510µohm
SVHC: No SVHC (17-Jan-2023)
на замовлення 4770 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 97.62 грн |
| 500+ | 78.88 грн |
| 1000+ | 63.36 грн |
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Технічний опис TPHR7404PU,L1Q(M TOSHIBA
Description: TOSHIBA - TPHR7404PU,L1Q(M - Leistungs-MOSFET, n-Kanal, 40 V, 400 A, 510 µohm, SOP Advance, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 40V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 400A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 210W, Bauform - Transistor: SOP Advance, Anzahl der Pins: 8Pin(s), Produktpalette: U-MOSIX-H Series, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 510µohm, SVHC: No SVHC (17-Jan-2023).
Інші пропозиції TPHR7404PU,L1Q(M за ціною від 63.36 грн до 172.13 грн
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TPHR7404PU,L1Q(M | Виробник : TOSHIBA |
Description: TOSHIBA - TPHR7404PU,L1Q(M - Leistungs-MOSFET, n-Kanal, 40 V, 400 A, 510 µohm, SOP Advance, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 400A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 210W Bauform - Transistor: SOP Advance Anzahl der Pins: 8Pin(s) Produktpalette: U-MOSIX-H Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 510µohm SVHC: No SVHC (17-Jan-2023) |
на замовлення 4770 шт: термін постачання 21-31 дні (днів) |
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| TPHR7404PU,L1Q(M | Виробник : Toshiba |
MOSFET SOP-8 SINGLE |
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TPHR7404PU,L1Q(M | Виробник : Toshiba Semiconductor and Storage |
Description: 40V UMOS9 S 0.65MOHM SOP-ADV(N) Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 210W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V |
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TPHR7404PU,L1Q(M | Виробник : Toshiba Semiconductor and Storage |
Description: 40V UMOS9 S 0.65MOHM SOP-ADV(N) Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 210W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V |
товар відсутній |