UFT5010A Microsemi Corporation
Виробник: Microsemi Corporation
Description: DIODE GP 100V 25A TO-3
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 25A
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Description: DIODE GP 100V 25A TO-3
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 25A
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
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Технічний опис UFT5010A Microsemi Corporation
Description: DIODE GP 100V 25A TO-3, Packaging: Bulk, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 25A, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A, Current - Reverse Leakage @ Vr: 15 µA @ 100 V.
Інші пропозиції UFT5010A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| UFT5010A | Виробник : Microchip Technology | Rectifiers UFR,FRR |
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