VMO550-01F IXYS
Виробник: IXYSDescription: MOSFET N-CH 100V 590A Y3-DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 590A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 500mA, 10V
Power Dissipation (Max): 2200W (Tc)
Vgs(th) (Max) @ Id: 6V @ 110mA
Supplier Device Package: Y3-DCB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2000 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50000 pF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 24884.05 грн |
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Технічний опис VMO550-01F IXYS
Category: Transistor modules MOSFET, Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW, Type of module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 100V, Drain current: 590A, Case: Y3-DCB, Electrical mounting: FASTON connectors; screw, Polarisation: unipolar, On-state resistance: 2.1mΩ, Pulsed drain current: 2.36kA, Power dissipation: 2.2kW, Technology: HiPerFET™, Kind of channel: enhanced, Gate charge: 2µC, Reverse recovery time: 300ns, Gate-source voltage: ±20V, Features of semiconductor devices: Kelvin terminal, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції VMO550-01F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| VMO550-01F | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 590A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 2.1mΩ Pulsed drain current: 2.36kA Power dissipation: 2.2kW Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 2µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
||
| VMO550-01F | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 590A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 2.1mΩ Pulsed drain current: 2.36kA Power dissipation: 2.2kW Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 2µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товар відсутній |