Технічний опис VS-10ETF02-M3 Vishay
Description: DIODE GEN PURP 200V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 200 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 200 V.
Інші пропозиції VS-10ETF02-M3
Фото | Назва | Виробник | Інформація |
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VS-10ETF02-M3 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
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VS-10ETF02-M3 | Виробник : Vishay Semiconductors | Schottky Diodes & Rectifiers New Input Diodes - TO-220-e3 |
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VS-10ETF02-M3 | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 130A; TO220AC; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 130A Case: TO220AC Max. forward voltage: 1.2V Reverse recovery time: 200ns |
товар відсутній |