WMH04N65C2 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис WMH04N65C2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2, Type of transistor: N-MOSFET, Technology: WMOS™ C2, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 3A, Power dissipation: 29W, Case: TO251S2, Gate-source voltage: ±30V, On-state resistance: 1.9Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції WMH04N65C2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| WMH04N65C2 | Виробник : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 3A Power dissipation: 29W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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