WMH4N80D1 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис WMH4N80D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 4A, Pulsed drain current: 16A, Power dissipation: 156W, Case: TO251S3, Gate-source voltage: ±30V, On-state resistance: 3.2Ω, Mounting: THT, Gate charge: 24.5nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції WMH4N80D1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| WMH4N80D1 | Виробник : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 156W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 3.2Ω Mounting: THT Gate charge: 24.5nC Kind of package: tube Kind of channel: enhanced |
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