Продукція > WAYON > WMJ80R260S

WMJ80R260S WAYON


Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Mounting: THT
Drain-source voltage: 800V
Drain current: 13A
On-state resistance: 255mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: WMOS™ S
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 78A
Case: TO247-3
кількість в упаковці: 1 шт
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис WMJ80R260S WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W, Mounting: THT, Drain-source voltage: 800V, Drain current: 13A, On-state resistance: 255mΩ, Type of transistor: N-MOSFET, Power dissipation: 227W, Polarisation: unipolar, Kind of package: tube, Gate charge: 39nC, Technology: WMOS™ S, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 78A, Case: TO247-3, кількість в упаковці: 1 шт.

Інші пропозиції WMJ80R260S

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
WMJ80R260S Виробник : WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Mounting: THT
Drain-source voltage: 800V
Drain current: 13A
On-state resistance: 255mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: WMOS™ S
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 78A
Case: TO247-3
товар відсутній