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WMK07N80M3

WMK07N80M3 WAYON


WMx07N80M3.pdf Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
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Технічний опис WMK07N80M3 WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO220-3, Type of transistor: N-MOSFET, Technology: WMOS™ M3, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 6.8A, Power dissipation: 55W, Case: TO220-3, Gate-source voltage: ±30V, On-state resistance: 1.8Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhanced, Heatsink thickness: 1.2...1.45mm, кількість в упаковці: 1 шт.

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WMK07N80M3 WMK07N80M3 Виробник : WAYON WMx07N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
товар відсутній