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WML80R1K0S WAYON


Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 3.6A; Idm: 22A; 29W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 22A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 13.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис WML80R1K0S WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 3.6A; Idm: 22A; 29W, Type of transistor: N-MOSFET, Technology: WMOS™ S, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 3.6A, Pulsed drain current: 22A, Power dissipation: 29W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 1.05Ω, Mounting: THT, Gate charge: 13.2nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.

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WML80R1K0S Виробник : WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 3.6A; Idm: 22A; 29W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 22A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 13.2nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній